| 材料 | β-BBO晶體 |
| 加工厚度 | 0.01mm-20mm |
| 表面質(zhì)量 | 10/5 |
| 光軸精度 | 3 分 |
| 平行度 | <10 秒 |
| 面型 | λ/10@633nm |
| 通光孔徑 | >95% |
| 鍍膜 | 保護(hù)膜or 增透膜 |
| 支架 | 客戶要求 |
晶體特性：
| 體結(jié)構(gòu) | Trigonal, space group R3c |
| 單孢參數(shù) | a = b = 12.532?, c = 12.717?…, Z = 6 |
| 熔點(diǎn) | 1095+5°C |
| 相變點(diǎn) | 925+5°C |
| 光學(xué)均勻性 | d n ~ 10-6/cm |
| 莫氏硬度 | 4 |
| 密度 | 3.85 g/cm3 |
| 吸收系數(shù) | < 0.1%/cm (at 1064nm) |
| 比熱 | 490 J/kg/°C |
| 潮解性 | 低 |
| 熱膨脹系數(shù) | a, 4 x 10-6/K; c, 36 x 10-6/K |
| 熱導(dǎo)率 | Perpendicular to c, 1.2 W/m/°C Parallel to c, 1.6 W/m/°C |
BBO晶體非線性光學(xué)系數(shù)
| 相位匹配輸出波長 | 189-3500 nm |
| 折射率 | ne = 1.5425, no = 1.6551 @ 1064 nm ne = 1.5555, no = 1.6749 @ 532 nm ne = 1.6146, no = 1.7571 @ 266 nm |
| 導(dǎo)熱率 | dno/dT = -9.3 x 10-6/°C dne/dT = -16.6 x 10-6/°C |
Sellmeier Equations (l in mm)
no2(l) = 2.7359-0.01354l2+0.01878/(l2-0.01822)
ne2(l) = 2.3753-0.01516l2+0.01224/(l2-0.01667)
BBO晶體非線性光學(xué)特性
| 相位匹配輸出波長 | 189 - 1750 nm |
| 非線性光學(xué)系數(shù) | d11 = 5.8 x d36 (KDP) d31= 0.05 x d11 d22 < 0.05 x d11 |
| 電光系數(shù) | y11 = 2.7 pm/V |
| 半波電壓 | 48 KV (at 1064 nm) |
| 損傷閾值 | 5 GW/cm2 (10 ns) @1064nm 10 GW/cm2 (1.3 ns) @ 1064 nm 1 GW/cm2 (10 ns) @532 nm 7 GW/cm2 (250 ps) @ 532 nm |
| 型號 | 尺寸(mm) | theta(Deg) | phi(Deg) | 鍍膜 | 應(yīng)用 |
| BBO4472 | 4.0*4.0*7.0 | 22.8 | 0 | AR/AR@1064&532nm | SHG@1064, Type I |
| BBO4474 | 4.0*4.0*7.0 | 47.6 | 0 | AR/AR@532&266nm | 4HG@1064, Type I |
| BBO4412 | 4.0*4.0*10.0 | 22.8 | 0 | AR/AR@1064&532nm | SHG@1064, Type I |
| BBO4414 | 4.0*4.0*10.0 | 47.6 | 0 | AR/AR@532&266nm | 4HG@1064, Type I |
| BBO5522 | 5.0*5.0*2.0 | 29.2 | 0 | AR/AR@800&400nm | SHG@800, Type I |
| BBO5512 | 5.0*5.0*1.0 | 29.2 | 0 | AR/AR@800&400nm | SHG@800, Type I |
| BBO5502 | 5.0*5.0*0.3-0.5 | 29.2 | 0 | AR/AR@800&400nm | SHG@800, Type I |
| BBO5512 | 5.0*5.0*0.1 | 29.2 | 0 | AR/AR@800&400nm | SHG@800, Type I |
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